JPH0433144B2 - - Google Patents

Info

Publication number
JPH0433144B2
JPH0433144B2 JP58231507A JP23150783A JPH0433144B2 JP H0433144 B2 JPH0433144 B2 JP H0433144B2 JP 58231507 A JP58231507 A JP 58231507A JP 23150783 A JP23150783 A JP 23150783A JP H0433144 B2 JPH0433144 B2 JP H0433144B2
Authority
JP
Japan
Prior art keywords
photo sensor
layer
light
photoconductive
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58231507A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60124884A (ja
Inventor
Mitsutoshi Kuno
Toshuki Komatsu
Katsumi Nakagawa
Masaki Fukaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP58231507A priority Critical patent/JPS60124884A/ja
Publication of JPS60124884A publication Critical patent/JPS60124884A/ja
Publication of JPH0433144B2 publication Critical patent/JPH0433144B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes

Landscapes

  • Light Receiving Elements (AREA)
JP58231507A 1983-12-09 1983-12-09 フォトセンサ− Granted JPS60124884A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58231507A JPS60124884A (ja) 1983-12-09 1983-12-09 フォトセンサ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58231507A JPS60124884A (ja) 1983-12-09 1983-12-09 フォトセンサ−

Publications (2)

Publication Number Publication Date
JPS60124884A JPS60124884A (ja) 1985-07-03
JPH0433144B2 true JPH0433144B2 (en]) 1992-06-02

Family

ID=16924573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58231507A Granted JPS60124884A (ja) 1983-12-09 1983-12-09 フォトセンサ−

Country Status (1)

Country Link
JP (1) JPS60124884A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4794878B2 (ja) * 2004-03-26 2011-10-19 キヤノン株式会社 光伝導素子

Also Published As

Publication number Publication date
JPS60124884A (ja) 1985-07-03

Similar Documents

Publication Publication Date Title
JPS60161664A (ja) 密着型二次元画像読取装置
JPS57173966A (en) Solid state image pickup device
JPS628951B2 (en])
JPH0433144B2 (en])
JPH0746721B2 (ja) イメ−ジセンサおよびその製造方法
JPS6327871B2 (en])
JPH0715144Y2 (ja) コプラナ−型光センサ−
JPS5884457A (ja) 長尺薄膜読取装置
KR910005603B1 (ko) 광전 변환 장치
JP2573342B2 (ja) 受光素子
JPS60219522A (ja) フオトセンサ
KR970009733B1 (ko) 밀착형 이미지 센서의 광 도전체 제조방법
JPS6130070A (ja) フオトセンサ
KR0162299B1 (ko) 포토다이오드의 제조방법
JPH021866Y2 (en])
JPS62252968A (ja) 非晶質シリコンイメ−ジセンサ
KR0134627B1 (ko) 이미지 센서로서의 포토다이오드 및 그 제조방법
JPS61203666A (ja) フオトダイオ−ドの製造方法
JPS63226076A (ja) 光起電力装置
JPS63226063A (ja) 光電変換装置
JPH01138751A (ja) 光センサ−アレイ及び読み取り装置
JPS6331164A (ja) 光電変換素子アレ−
JPH01192166A (ja) 受光素子
JPH022168A (ja) ラインセンサ
JPS58201356A (ja) 非晶質シリコンイメ−ジセンサ−